Thermal characterization of direct wafer bonded Si-on-SiC

Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications space. We have used transient thermoreflectance finite element simulations characterize the properties of direct Si-on-4H–SiC samples, utilizing a hydrophobic hydrophilic bonding process. In both instances, interface has good resulting TBR eff values 6 + 4/−2 m 2 K GW −1 (hydrophobic) 9 3/−2 (hydrophilic). Two-dimensional equivalent MOSFET showed significant benefit using over SOI. these simulations, with 200 nm thick, 42 μm wide Si drift region was recreated on SOI structure (2 buried oxide) material characterized here. At 5 W mm dissipation, shown result >60% decrease temperature rise compared structure.